Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film

Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film

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In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar click here structure memory cells.We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current−voltage, endurance, and retention time tests.We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced turbo air m3f24-1 dipolar reorientation.